X
X
R
R
P
P
7
7
7
7
0
0
8
8
 
 
a
a
n
n
d
d
 
 
X
X
R
R
P
P
7
7
7
7
4
4
0
0
 
 
Q
Q
u
u
a
a
d
d
 
 
C
C
h
h
a
a
n
n
n
n
e
e
l
l
 
 
D
D
i
i
g
g
i
i
t
t
a
a
l
l
 
 
P
P
W
W
M
M
 
 
S
S
t
t
e
e
p
p
 
 
D
D
o
o
w
w
n
n
 
 
C
C
o
o
n
n
t
t
r
r
o
o
l
l
l
l
e
e
r
r
s
s
 
 
 
?2012 Exar Corporation
26/28
Rev. 1.2.2
Total input voltage ripple is the sum of the above:
ESR
Cin
Tot
V
V
V

+

=
 
Power MOSFETs Selection
Selecting MOSFETs with lower Rdson reduces conduction losses at the expense of increased
switching losses. A simplified expression for conduction losses is given by:
in
out
dson
out
cond
V
V
R
I
?/DIV>
?/DIV>
=
2
 
MOSFETs junction temperature can be estimated from:
ambient
thja
cond
j
T
R
P
+
= 2
 
This assumes that the switching loss is the same as the conduction loss.
thja
 is the total MOSFET
thermal resistance from junction to ambient.
LAYOUT GUIDELINES
Refer to application note ANP-32 Practical Layout Guidelines for Power
XR
  Designs and ANP-35
XRP77XX: Extending the MOSFET Gate Drive Conductors.
REGISTER MAP
See ANP-31 PowerXR Configuration and Programming for details of the register map and other
programming information.
 
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